Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors

ABSTRACT

Nonvolatile memory devices utilize vertically-stacked strings of nonvolatile memory cells (e.g., NAND-type strings) that can be selectively coupled to common source lines within a substrate. This selective coupling may be provided by lateral ground select transistors having different threshold voltages that account for different lateral spacings between the vertically-stacked strings of nonvolatile memory cells and the common source lines.

REFERENCE TO PRIORITY APPLICATION

This U.S. non-provisional patent application is a continuation of U.S.patent application Ser. No. 14/272,765, filed May 8, 2014, which is acontinuation of U.S. patent application Ser. No. 14/095,597 filed Dec.3, 2013, now U.S. Pat. No. 8,743,614, which is a divisional of U.S.patent application Ser. No. 13/219,178 filed Aug. 26, 2011, now U.S.Pat. No. 8,614,917, which claims priority under 35 U.S.C. §119 to KoreanPatent Application No. 10-2010-0083682, filed on Aug. 27, 2010, and is acontinuation-in-part of U.S. patent application Ser. No. 12/701,246filed Feb. 5, 2010, now U.S. Pat. No. 8,644,046, which claims priorityunder 35 U.S.C. §119 to Korean Patent Application No. 10-2009-0010546,filed on Feb. 10, 2009, the entire contents of which are herebyincorporated by reference.

FIELD OF THE INVENTION

The present disclosure herein relates to semiconductor devices andmethods of forming same.

BACKGROUND OF THE INVENTION

To satisfy excellent performance and low cost, it may be required toincrease a degree of integration in semiconductor devices. Particularly,a degree of integration in memory devices is an important factor fordetermining the prices of products. In typical Two-Dimensional (2D)memory devices, a degree of integration is mainly determined inproportion to the occupied area of memory cells, which is affected bythe level of fine pattern forming technology. However, since high-costequipment is required for reducing pattern size, a degree of higherintegration in 2D semiconductor memory devices may become limited.

To overcome these limitations, Three-Dimensional (3D) memory devicesincluding three-dimensionally arranged memory cells are being proposed.For mass production of the 3-D memory devices, however, a processtechnology which reduces manufacturing costs per bit relative to 2-Dmemory devices and realizes reliable product characteristic is required.

SUMMARY OF THE INVENTION

Nonvolatile memory devices according to embodiments of the inventionutilize vertically-stacked strings of nonvolatile memory cells (e.g.,NAND-type strings) that can be selectively coupled to common sourcelines within a substrate. This selective coupling may be provided bylateral ground select transistors having different threshold voltagesthat account for different lateral spacings between thevertically-stacked strings of nonvolatile memory cells and the commonsource lines.

According to some of these embodiments of the invention, a nonvolatilememory device includes a first common source line of first conductivitytype within a semiconductor substrate. A first NAND-type string ofnonvolatile memory cells is provided on the semiconductor substrate. Thefirst NAND-type string includes a first vertically-stacked plurality ofnonvolatile memory cells and a first ground select transistorelectrically coupled in series with the first vertically-stackedplurality of nonvolatile memory cells. A first lateral ground selecttransistor is also provided, which has a source terminal within thefirst common source line and a drain terminal electrically connected toa source terminal of the first ground select transistor. A secondNAND-type string of nonvolatile memory cells is provided at a locationon the semiconductor substrate that is adjacent to the first NAND-typestring. The second NAND-type string includes a second vertically-stackedplurality of nonvolatile memory cells and a second ground selecttransistor electrically coupled in series with the secondvertically-stacked plurality of nonvolatile memory cells. A secondlateral enhancement-mode ground select transistor is provided, which hasa source terminal electrically connected to the drain terminal of thefirst lateral enhancement-mode ground select transistor and a drainterminal electrically connected to a source terminal of the secondground select transistor. To maintain a relatively low series resistancebetween the second NAND-type string and the first common source line,the second lateral ground select transistor is configured to have alower threshold voltage relative to the first lateral ground selecttransistor.

According to additional embodiments of the invention, the first commonsource line includes a region of first conductivity type within a region(e.g., well region) of second conductivity type and a channel region ofthe first lateral ground select transistor is more heavily doped withsecond conductivity type dopants relative to a channel region of thesecond lateral ground select transistor. In some of these embodiments ofthe invention, a net conductivity type of the channel region of thesecond lateral ground select transistor is of first conductivity type.In alternative embodiments of the invention, channel region of thesecond lateral ground select transistor includes a region of firstconductivity type and a region of second conductivity type.

According to still further embodiments of the invention, a nonvolatilememory device includes first and second common source lines of firstconductivity type within a semiconductor substrate. A plurality oflateral ground select transistors are also provided. These lateralground select transistors are electrically connected in series and havecommonly-connected gate electrodes. In particular, the plurality oflateral ground select transistors may include a first lateral groundselect transistor having a source terminal within the first commonsource line and a second lateral ground select transistor having asource terminal within the second common source line. A third lateralground select transistor is also provided, which has a threshold voltagelower than a threshold voltage of at least one of the first and secondlateral ground select transistors. The memory device further includesfirst, second and third NAND-type strings of vertically-stackednonvolatile memory cells on the semiconductor substrate. The firstNAND-type string includes a first ground select transistor having asource terminal electrically connected to a drain terminal of the firstlateral ground select transistor. The second NAND-type string includes asecond ground select transistor having a source terminal electricallyconnected to a drain terminal of the second lateral ground selecttransistor. The third NAND-type string includes a third ground selecttransistor having a source terminal electrically connected to a currentcarrying terminal of the third lateral ground select transistor.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the inventive concept, and are incorporated in andconstitute a part of this specification. The drawings illustrateexemplary embodiments of the inventive concept and, together with thedescription, serve to explain principles of the inventive concept. Inthe drawings:

FIG. 1 is a block diagram illustrating a nonvolatile memory deviceaccording to embodiments of the inventive concept;

FIG. 2 is a block diagram illustrating as an example of a memory cellarray in FIG. 1;

FIG. 3 is a perspective view of a memory block in FIGS. 1 and 2;

FIG. 4 is an enlarged view of a portion A of FIG. 3;

FIGS. 5 and 6 are circuit diagrams illustrating a memory block of anonvolatile memory device according to an embodiment of the inventiveconcept;

FIG. 7A is a cross-sectional view taken along line I-I′ of FIG. 3, in anexample of a nonvolatile memory device according to an embodiment of theinventive concept;

FIG. 7B is a plan view illustrating disposition of impurity regionswhich are doped on a well, in an example of a nonvolatile memory deviceaccording to an embodiment of the inventive concept;

FIG. 8A is a cross-sectional view taken along line I-I′ of FIG. 3, inanother example of a nonvolatile memory device according to anembodiment of the inventive concept;

FIG. 8B is a plan view illustrating disposition of impurity regionswhich are doped on a well, in another example of a nonvolatile memorydevice according to an embodiment of the inventive concept;

FIG. 9A is a cross-sectional view taken along line I-I′ of FIG. 3;

FIG. 9B is a plan view illustrating disposition of impurity regionswhich are doped on a well;

FIG. 10 is a perspective view illustrating a memory block of anonvolatile memory device according to another embodiment of theinventive concept;

FIGS. 11 and 12 are circuit diagrams illustrating a memory block of anonvolatile memory device according to another embodiment of theinventive concept;

FIG. 13A is a cross-sectional view taken along line II-II′ of FIG. 10,in an example of a nonvolatile memory device according to anotherembodiment of the inventive concept;

FIG. 13B is a plan view illustrating disposition of impurity regionswhich are doped on a well, in an example of a nonvolatile memory deviceaccording to another embodiment of the inventive concept;

FIG. 14A is a cross-sectional view taken along line II-II′ of FIG. 10,in another example of a nonvolatile memory device according to anembodiment of the inventive concept;

FIG. 14B is a plan view illustrating disposition of impurity regionswhich are doped on a well, in another example of a nonvolatile memorydevice according to another embodiment of the inventive concept;

FIG. 15A is a cross-sectional view taken along line II-II′ of FIG. 10,in another example of a nonvolatile memory device according to anotherembodiment of the inventive concept;

FIG. 15B is a plan view illustrating disposition of impurity regionswhich are doped on a well, in another example of a nonvolatile memorydevice according to another embodiment of the inventive concept;

FIG. 16 is a perspective view illustrating a memory block of anonvolatile memory device according to another embodiment of theinventive concept;

FIGS. 17 and 18 are circuit diagrams illustrating a memory block of anonvolatile memory device according to another embodiment of theinventive concept;

FIG. 19A is a cross-sectional view taken along line of FIG. 16, in anexample of a nonvolatile memory device according to another embodimentof the inventive concept;

FIG. 19B is a plan view illustrating disposition of impurity regionswhich are doped on a well, in an example of a nonvolatile memory deviceaccording to another embodiment of the inventive concept;

FIG. 20A is a cross-sectional view taken along line III-III′ of FIG. 16,in another example of a nonvolatile memory device according to anotherembodiment of the inventive concept;

FIG. 20B is a plan view illustrating disposition of impurity regionswhich are doped on a well, in another example of a nonvolatile memorydevice according to another embodiment of the inventive concept;

FIGS. 21A to 21F illustrate an example of a method of forming thenonvolatile memory device according to an embodiment of the inventiveconcept which will be described below with reference to FIG. 7B, and arecross-sectional views corresponding to line I-I′ of FIG. 3;

FIGS. 22A to 22G illustrate another example of a method of forming thenonvolatile memory device according to an embodiment of the inventiveconcept which will be described below with reference to FIG. 8B, and arecross-sectional views corresponding to line I-I′ of FIG. 3;

FIGS. 23A to 23G illustrate another example of a method of forming thenonvolatile memory device according to an embodiment of the inventiveconcept which will be described below with reference to FIG. 9B, and arecross-sectional views corresponding to line I-I′ of FIG. 3;

FIG. 24 is a block diagram illustrating a memory system 1000 whichincludes a nonvolatile memory device according to embodiments of theinventive concept;

FIG. 25 is a block diagram illustrating an application example of thememory system of FIG. 24; and

FIG. 26 is a block diagram illustrating a computing system whichincludes the memory system of FIG. 25.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Exemplary embodiments of the inventive concept will be described belowin more detail with reference to the accompanying drawings. Theinventive concept may, however, be embodied in different forms andshould not be construed as limited to the embodiments set forth herein.Rather, these embodiments are provided so that this disclosure will bethorough and complete, and will fully convey the scope of the inventiveconcept to those skilled in the art.

In embodiments of the inventive concept, an impurity-doped region mayhave a first conductive type or a second conductive type by doping afirst conductive impurity ion and a second conductive impurity ion atdifferent concentrations. The doping concentration of the impurity-dopedregion denotes a final conductive concentration with differentconductive types offset.

In the specification, it will be understood that when an element such asa layer, film, region, or substrate is referred to as being “on” anotherelement, it can be directly on the other element or intervening elementsmay also be present. In the figures, the dimensions of layers andregions are exaggerated for clarity of illustration. Also, though termslike a first, a second, and a third are used to describe various regionsand layers in various embodiments of the present invention, the regionsand the layers are not limited to these terms. These terms are used onlyto discriminate one region or layer from another region or layer.Therefore, a layer referred to as a first layer in one embodiment can bereferred to as a second layer in another embodiment. An embodimentdescribed and exemplified herein includes a complementary embodimentthereof. In the specification, the term ‘and/or’ is used as meaning inwhich the term includes at least one of preceding and succeedingelements. Like reference numerals refer to like elements throughout.

In this specification, a region is doped with different quantity ofimpurity ions including a first conductive type impurity ions and asecond conductive type impurity ions such that the doped region has thefirst or second conductive type. The impurity doping concentration ofthe doped region represents final conductive type having an amount ofthe impurity ions that the first and second conductive type impurityions are offset each other.

Hereinafter, exemplary embodiments of the inventive concept will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 is a block diagram illustrating a nonvolatile memory deviceaccording to embodiments of the inventive concept. Referring to FIG. 1,a nonvolatile memory device according to embodiments of the inventiveconcept includes a memory cell array 10, an address decoder 20, aread/write circuit 30, a data input/output circuit 40, and a controllogic 50. The memory cell array 10 may be connected to the addressdecoder 20 through a plurality of word lines WL, and be connected to theread/write circuit 30 through a plurality of bit lines BL. The memorycell array 10 includes a plurality of memory cells. For example, thememory cell array 10 may store one or more bits in each cell.

The address decoder 20 may be connected to the memory cell array 10through the word lines WL. The address decoder 20 operates according tothe control of the control logic 50. The address decoder 20 may receivean address ADDR from the outside. The address decoder 20 decodes a rowaddress among the received address ADDR to select a corresponding wordline from among the word lines WL. Also, the address decoder 20 decodesa column address among the address ADDR and transfers the decoded columnaddress to the read/write circuit 30. For example, the address decoder20 may include elements such as a row decoder, a column decoder andaddress buffer.

The read/write circuit 30 may be connected to the memory cell array 10through the bit line BL, and be connected to the data input/outputcircuit 40 through the data lines DL. The read/write circuit 30 mayoperate according to the control of the control logic 5Q. The read/writecircuit 30 receives the decoded column address from the address decoder20. The read/write circuit 30 selects a bit line BL using the decodedcolumn address. For example, the read/write circuit 30 receives datafrom the data input/output circuit 40 and writes the received data inthe memory cell array 10. The read/write circuit 30 reads data from thememory cell array 10 and transfers the read data to the datainput/output circuit 40. The read/write circuit 30 reads data from afirst storage region of the memory cell array 10, and writes the readdata in a second storage region of the memory cell array 10. Forexample, the read/write circuit 30 may perform a copy-back operation.

The read/write circuit 30 may include elements which include a pagebuffer (or a page register) and a column selection circuit. As anotherexample, the read/write circuit 30 may include elements which include asensing amplifier, a write driver and a column selection circuit.

The data input/output circuit 40 may be connected to the read/writecircuit 30 through the data lines DL. The data input/output circuit 40operates according to the control of the control logic 50. The datainput/output circuit 40 exchanges data DATA with the outside. The datainput/output circuit 40 transfers the data DATA to the read/writecircuit 30 through the data lines DL. The data input/output circuit 40outputs the data DATA, which is transferred from the read/write circuit30 through the data lines DL, to the outside. For example, the datainput/output circuit 40 may include an element such as a data buffer.

The control logic 50 may be connected to the address decoder 20, theread/write circuit 30 and the data input/output circuit 40. The controllogic 50 controls the operation of a 3D semiconductor device. Thecontrol logic 50 may operate in response to a control signal CTRLtransferred from the outside.

FIG. 2 is a block diagram illustrating as an example of the memory cellarray 10 of FIG. 1. Referring to FIG. 2, the memory cell array 10 mayinclude a plurality of memory blocks BLK1 to BLKh. Each of the memoryblocks BLK1 to BLKh may have a 3D structure (or a vertical structure).For example, the each of the memory blocks BLK1 to BLKh may includestructures that are extended in first to third directions intersectingeach other. For example, the each of the memory blocks BLK1 to BLKhincludes a plurality of cell strings that are extended in the thirddirection.

FIG. 3 is a perspective view of the memory block which has beendescribed above with reference to FIGS. 1 and 2, and the nonvolatilememory device 100 according to an embodiment of the inventive conceptwill be described below with reference to FIG. 3. Referring to FIG. 3, afirst conductive well 103 may be provided in a substrate 101. A bufferdielectric layer 121 may be provided on the substrate 101. The bufferdielectric layer 121 may be a silicon oxide layer. Insulation patterns125 and conductive patterns, which are separated from each other bydisposing the insulation patterns 125, may be provided on the bufferdielectric layer 121. The insulation patterns 125 may be a silicon oxidelayer. The buffer dielectric layer 121 may be much thinner than theinsulation patterns 125.

The conductive patterns may include a ground selection line GSL, stringselection lines SSL1 to SSL3, and word lines WL0 to WL3 therebetween.The conductive patterns may have a line shape extended in the firstdirection. The conductive patterns may include silicon, tungsten, metalnitrides or metal silicides that is/are doped.

An isolation region 131 expanded in the first direction may be providedbetween the conductive patterns adjacent in the second direction. Theisolation region 131 may be filled with an isolation pattern (notshown). The isolation pattern may be formed of silicon oxide. The commonsource lines CSL1 and CSL2 are provided in the well 103 under theisolation region 131. The common source lines CSL1 and CSL2 may beseparated from each other and extended in the first direction inside thewell 103. The common source lines CSL1 and CSL2 may have a secondconductive type different from the first conductive type.

A plurality of active pillars PL are provided to be connected to thewell 103 of the substrate 101 through the conductive patterns GSL, WL0to WL3 and SSL1 to SSL3, as illustrated by FIG. 4. The active pillars PLmay have a long axis that is vertically extended from the substrate 101(i.e., that is extended in the third direction). The active pillars PLmay include a semiconductor material. The active pillars PL may have asolid cylinder shape or a hollow cylinder shape (for example, a macaronishape). The internal portions of the macaroni-shaped active pillars maybe filled with the filling insulation layer 129. The filling insulationlayer 129 may be formed of silicon oxide. In one aspect of the inventiveconcept, the active pillars PL and the substrate 101 may be asemiconductor having a continuous structure. The active pillars PL maybe a single crystal semiconductor. In another aspect of the inventiveconcept, the active pillars PL and the substrate 101 may have adiscontinuous interface. The active pillars PL may be a semiconductorhaving a poly-crystal or amorphous structure. The active pillars PL mayinclude a body part adjacent to the substrate 101, and a drain region Dseparated from the substrate 101 in an upper portion of the activepillar PL. The body part may have the first conductive type, and thedrain region D may have a second conductive type different from thefirst conductive type.

One ends (i.e., the body part) of the active pillars PL may be connectedto the well 103 of the substrate 101, and other ends (i.e., the drainregion) of the active pillars PL be connected to the bit line 13Lthrough bit line contact 141. The bit line 13L may be extended in thesecond direction. The active pillars PL may be arranged in a matrix typealong the first and second directions. Therefore, intersection pointsbetween the word lines WL0 to WL3 and the active pillars PL aredistributed three-dimensionally. The memory cells MC of the nonvolatilememory device 100 according to an embodiment of the inventive conceptare provided in the three-dimensionally distributed intersection points.At least three active pillars PL may be arranged in the second directionbetween the first and second common source lines CSL1 and CSL2 and beconnected to one bit line BL in common.

The first to third string selection lines SSL1 to SSL3 are electricallycoupled with the active pillars PL arranged in the first directionbetween the first and second common source lines CSL1 and CSL2.

An information storage layer 135 may be provided between the word linesWL0 to WL3 and the active pillars PL. The information storage layer 135may be extended to the tops and bottoms of the word lines. FIG. 4 is anenlarged view of a portion A of FIG. 3. Referring to FIG. 4, theinformation storage layer 135 may include a blocking insulation layer135 c adjacent to the word lines WL0 to WL3, a tunnel insulation layer135 a adjacent to the active pillars PL, and a charge storage layer 135b therebetween. The blocking insulation layer 135 c may include a highdielectric layer (for example, aluminum oxide or hafnium oxide). Theblocking insulation layer 135 c may be a multi-layer that is configuredwith a plurality of thin films. For example, the blocking insulationlayer 135 c may include aluminum oxide and silicon oxide, and a stackedorder between the aluminum oxide and the silicon oxide may be various.The charge storage layer 135 b may be an insulation layer including acharge trap layer or a conductive nano particle. The charge trap layer,for example, may include silicon nitride. The tunnel insulation layer135 a may include silicon oxide.

FIGS. 5 and 6 are circuit diagrams illustrating a memory block of anonvolatile memory device according to an embodiment of the inventiveconcept. Referring to FIG. 5, a nonvolatile memory device 100 accordingto an embodiment of the inventive concept may include a bit line BL, aplurality of word lines WL0 to WL3, a plurality of string selectionlines SSL1 to SSL3, a ground selection line GSL, a first common sourceline CSL1 and a second common source line CSL2. A plurality of cellstrings CSTR1 to CSTR3 are provided between the bit line BL and thefirst and second common source lines CSL1 and CSL2.

One cell string may include a string selection transistor SST connectedto the bit line 13L, a ground selection transistor GST connected to thefirst and second common source lines CSL1 and CSL2, and a plurality ofmemory cells MC provided between the string selection transistor SST andthe ground selection transistor GST. The memory cells MC are provided atone active pillar. The gate of the ground selection transistor GST isconnected to the ground selection line GSL. The gates of the memorycells MC are connected to the word lines WL0 to WL3. The stringselection transistor SST may be in plurality. The gates of stringselection transistors arranged in the first direction are connected toone of the string selection lines SSL1 to SSL3, and the drains of aplurality of string selection transistors arranged in the seconddirection are connected to the bit line BL.

Each of the cell strings CSTR1 to CSTR3 may have a structure in whichthe memory cells MC are connected in series. Therefore, the channels ofthe string selection transistors SST, the channels of the groundselection transistors GST and the channels of the memory cells MC may beconnected in series.

Lateral transistors may be provided in the well 103 of the substrate 101between the first and second common source lines CSL1 and CSL2. Thelateral transistors may include first to fourth lateral transistors LTR1to LTR4 that are connected in series. The gates of the first to fourthlateral transistors LTR1 to LTR4 are connected to the ground selectionline GSL. That is, the ground selection transistor GST and the first tofourth lateral transistors LTR1 to LTR4 may share a gate.

Referring to FIGS. 5 and 6, three cell strings, for example, first tothird cell strings CSTR1 to CSTR3 may be connected to one bit line BL incommon and be provided between the first and second common source linesCSL1 and CSL2.

The sources of the three cell strings may be connected between the firstand second lateral transistors LTR1 and LTR2, between the second andthird lateral transistors LTR2 and LTR3, between the third and fourthlateral transistors LTR3 and LTR4, respectively. The first and fourthlateral transistors LTR1 and LTR4 may have a first threshold voltageVth1, and the second and third lateral transistors LTR2 and LTR3 mayhave a second threshold voltage Vth2. The second threshold voltage Vth2is lower than the first threshold voltage Vth1.

Most quantity of a current I passing through the first cell string CSTR1may flow to the first common source line CSL1 through the first lateraltransistor LTR1. The remain quantity of the current I passing throughthe first cell string CSTR1 may flow to the second common source lineCSL2 through the second to fourth lateral transistors LTR2 to LTR4. Acurrent I passing through the second cell string CSTR2 may flow to thefirst common source line CSL1 through the first and second lateraltransistors LTR1 and LTR2, and flow to the second common source lineCSL2 through the third and fourth lateral transistors LTR3 and LTR4.Most quantity of a current I passing through the third cell string CSTR3may flow to the second common source line CSL2 through the fourthlateral transistor LTR4. The remain quantity of the current I passingthrough the third cell string CSTR3 may flow to the first common sourceline CSL1 through the first to third lateral transistors LTR1 to LTR3.As the second threshold voltage Vth2 is controlled to less than thefirst threshold voltage Vth1, a difference between currents I passingthrough the cell strings can decrease.

FIGS. 7A and 7B illustrate an example of the nonvolatile memory device100 according to an embodiment of the inventive concept. FIG. 7A is across-sectional view taken along line I-I′ of FIG. 3. FIG. 7B is a planview illustrating disposition of impurity regions which are doped on awell. Referring to FIGS. 7A and 7B, a substrate channel region 110 isprovided in the well 103 between the first and second common sourcelines CSL1 and CSL2. The substrate channel region 110 may include edgeregions 111 that are adjacent to the first and second common sourcelines CSL1 and CSL2 and extended in the first direction, and a middleregion 112 between the edge regions 111. The edge regions 111 may beprovided between the first and second common source lines CSL1 and CSL2and active pillars most adjacent to the first and second common sourcelines CSL1 and CSL2.

The edge regions 111 and the middle region 112 may have the firstconductive type. The edge regions 111 may have a first impurity dopingconcentration, and the middle region 112 may have a second impuritydoping concentration lower than the first impurity doping concentration.The active pillars PL may contact the middle region 112. As illustratedby FIGS. 6, 7A and 7B, the first to fourth lateral transistors LTR1 toLTR4, which use the ground selection line GSL as a gate, may be providedin the substrate channel region 110. The first and fourth lateraltransistors LTR1 and LTR4 use the edge regions 111 as a channel. Thesecond and third lateral transistors LTR2 and LTR3 use the middle region112 as a channel.

The first and fourth lateral transistors LTR1 and LTR4 of the edgeregions 111 may have a first threshold voltage Vth1. The second andthird lateral transistors LTR2 and LTR3 of the middle region 112 mayhave a second threshold voltage Vth2. Based on the above-describeddoping profile, the second threshold voltage Vth2 may be lower than thefirst threshold voltage Vth1. Therefore, a first current I1 from activepillars PL electrically coupled to the first and third string selectiontransistors SSL1 and SSL3 to a common source line just adjacent to theactive pillars PL may be the substantially same as a second current I2from active pillars PL electrically coupled to the second stringselection transistors SSL2 to the common source lines. A current fromactive pillars PL electrically coupled to the first to third stringselection transistors SSL1 to SSL3 to a common source line that is notjust adjacent to the active pillars PL may be lower by a minimal degree.

In contrast, if the impurity doping concentration of the edge regions111 is the same as that of the middle region 112, the second current I2will be lower than the first current I1. This is because a seconddistance from active pillars PL coupled to the second string selectiontransistors SSL2 to the common source lines CSL1 and CSL2 is greaterthan a first distance from active pillars PL coupled to the first andthird string selection transistors SSL1 and SSL3 to the common sourcelines CSL1 and CSL2.

Due to the high concentration doping of the first conductive impuritiesof the edge regions 111, the current off characteristic of the groundselection line GSL is maintained, the influence of the second conductiveimpurity ion of the common source lines CSL1 and CSL2 being diffusedinto the middle region 112 can be reduced. Due to the low concentrationdoping of the first conductive impurities of the middle region 112, acell current dispersion between active pillars that are separated by thefirst distance from the common source lines and active pillars that areseparated by the second distance greater than the first distance fromthe common source lines can decrease.

FIGS. 8A and 8B illustrate another example of the nonvolatile memorydevice 100 according to an embodiment of the inventive concept. FIG. 8Ais a cross-sectional view taken along line I-I′ of FIG. 3. FIG. 8B is aplan view illustrating disposition of impurity regions which are dopedon a well. Repetitive description on the same technical feature as thatof FIGS. 7A and 7B will be omitted, and only a difference will bedescribed below.

Referring to FIGS. 8A and 8B, the edge regions 111 may be edge regions111 having the first conductive type. The middle region 112 may havesecond impurity doping regions 116 having the first conductive type, andthird impurity regions 117. The edge regions 111 may have a firstimpurity doping concentration, and the second impurity regions 116 mayhave a second impurity doping concentration lower than the firstimpurity doping concentration. The third impurity regions 117 may havethe second conductive type. On the other hand, the third impurityregions 117 may have the first conductive type, and a third impuritydoping concentration lower than the second impurity dopingconcentration. The active pillars PL may contact the second impurityregions 116. The second impurity regions 116 may be extended in thesecond direction in which the active pillars PL are arranged. The thirdimpurity regions 117 may be provided between the second impurity regions116.

FIGS. 6, 8A and 8B, the first to fourth lateral transistors LTR1 to LTR4using the ground selection line GSL as a gate may be provided in thesubstrate channel region 110. The first and fourth lateral transistorsLTR1 and LTR4 may use the edge regions 111 as a channel. The second andthird lateral transistors LTR2 and LTR3 may use the third impurityregions 117 as a channel.

The first and fourth lateral transistors LTR1 and LTR4 of the edgeregions 111 may have a first threshold voltage Vth1. The second andthird lateral transistors LTR2 and LTR3 of the middle region 112 mayhave a second threshold voltage Vth2. Based on the above-describeddoping profile, the second threshold voltage Vth2 may be lower than thefirst threshold voltage Vth1. The second threshold voltage Vth2 may belower than that of the example which has been described above withreference to FIGS. 7A and 7B. Therefore, a first current I1 from activepillars PL electrically coupled to the first and third string selectiontransistors SSL1 and SSL3 to a common source line just adjacent to theactive pillars PL may be the substantially same as a second current I2from active pillars PL electrically coupled to the second stringselection transistors SSL2 to the common source lines.

FIGS. 9A and 9B illustrate another example of the nonvolatile memorydevice 100 according to an embodiment of the inventive concept. FIG. 9Ais a cross-sectional view taken along line I-I′ of FIG. 3. FIG. 9B is aplan view illustrating disposition of impurity regions which are dopedon a well. Repetitive description on the same technical feature as thatof FIGS. 8A and 8B will be omitted, and only a difference will bedescribed below.

Referring to FIGS. 9A and 9B, the edge regions 111 may be edge regions111 having the first conductive type. The middle region 112 may havesecond impurity doping regions 116 having the first conductive type, andthird impurity regions 117. The edge regions 111 may have a firstimpurity doping concentration, and the second impurity regions 116 mayhave a second impurity doping concentration lower than the firstimpurity doping concentration. On the other hand, the third impurityregions 117 may have the second conductive type. The third impurityregions 117 may have the first conductive type, and a third impuritydoping concentration lower than the second impurity dopingconcentration.

The edge regions 111 and the second impurity regions 116 just adjacentto the edge regions 111 may be coupled and be provided to overlap withthe first and third string selection lines SSL1 and SSL3. The other ofthe second impurity regions 116 may be provided to overlap with thesecond string selection line SSL2. The second impurity region 116 mayhave a width broader than that of the other example which has beendescribed above with reference to FIG. 8B. The third impurity regions117 may be provided between the second impurity regions 116. The thirdimpurity regions 117 may overlap with a separated space between thestring selection lines SSL1 to SSL3.

The first and fourth lateral transistors LTR1 and LTR4 may use the edgeregions 111 as a channel. The second and third lateral transistors LTR2and LTR3 may use the second and third impurity regions 117 as a channel.

FIG. 10 is a perspective view of the memory block which has beendescribed above with reference to FIGS. 1 and 2, and a nonvolatilememory device 200 according to another embodiment of the inventiveconcept will be described below with reference to FIG. 10. Repetitivedescription on the same technical feature as that of FIGS. 3 and 4 willbe omitted, and only a difference will be described below.

Referring to FIG. 10, a first conductive well 103 may be provided in asubstrate 101. A buffer dielectric layer 121 may be provided on thesubstrate 101. Insulation patterns 125 and conductive patterns, whichare separated from each other by disposing the insulation patterns, maybe provided on the buffer dielectric layer 121. The buffer dielectriclayer 121 may be much thinner than the insulation patterns 125.

The conductive patterns may include a ground selection line GSL, stringselection lines SSL1 and SSL2, and word lines WL0 to WL3 therebetween.The conductive patterns may have a line shape extended in the firstdirection.

An isolation region 131 extended in the first direction may be providedbetween the conductive patterns adjacent in the second direction. Thecommon source lines CSL1 and CSL2 are provided in the well 103 under theisolation region 131. The common source lines CSL1 and CSL2 may beseparated from each other and be extended in the first direction insidethe well 103. The common source lines CSL1 and CSL2 may have a secondconductive type different from the first conductive type.

A plurality of active pillars PL are provided to be connected to thewell 103 of the substrate 101 through the conductive patterns GSL, WL0to WL3 and SSL1 to SSL3. The active pillars PL may have a long axis thatis vertically extended from the substrate 101. (i.e., that is extendedin the third direction).

The active pillars PL are just adjacent and arranged to be alternatelyoffset. The active pillars PL, which are just adjacent and arealternately offset, are arranged to be offset to each other in thesecond direction. For example, the active pillars PL may be arranged atfirst distances in the first direction. The first distance D may be twotimes greater than the size F of the active pillars PL (i.e., P=2F). Theactive pillars PL may include first active pillars PL1 of a first linein the first direction, and second active pillars PL2 of a second linein the first direction, wherein the second active pillars PL2 areadjacent to the first line in the second direction. The second activepillars PL2 may be shifted by F (i.e., D/2) in the first direction fromthe first active pillars PL1. As illustrated in FIG. 10, the first andsecond active pillars PL1 and PL2 may be alternately provided in thesecond direction.

The first and second active pillars PL1 and PL2 may be connected todifferent bit lines. The bit lines may include first and second bitlines BL1 and BL2. The first bit line BL1, for example, may connect thefirst active pillars PL1 and be extended in the second direction. Thesecond bit line BL2, for example, may connect the second active pillarsPL2 and be extended in the second direction.

A plurality of active pillars, which are just adjacent and arealternately offset, may be electrically coupled to one string selectionline extended in the first direction. Two string selection lines SSL1and SSL2 may be provided between the first and second common sourcelines CSL1 and CSL2.

FIGS. 11 and 12 are circuit diagrams illustrating a memory block of anonvolatile memory device according to another embodiment of theinventive concept. Repetitive description on the same technical featureas that of FIGS. 5 and 6 will be omitted, and only a difference will bedescribed below.

Referring to FIG. 11, a nonvolatile memory device 200 according toanother embodiment of the inventive concept may include a bit line BL, aplurality of word lines WL0 to WL3, a plurality of string selectionlines SSL1 to SSL3, a ground selection line GSL, a first common sourceline CSL1 and a second common source line CSL2. The bit line may includefirst and second bit lines BL1 and BL2 which are adjacent to each otherand extended in the second direction. A plurality of cell strings CSTR1to CSTR4 are provided between the bit line BL and the first and secondcommon source lines CSL1 and CSL2.

One cell string may include a string selection transistor SST connectedto the bit line BL, a ground selection transistor GST connected to thefirst and second common source lines CSL1 and CSL2, and a plurality ofmemory cells MC provided between the string selection transistor SST andthe ground selection transistor GST. The memory cells MC are provided atone active pillar. The gate of the ground selection transistor GST isconnected to the ground selection line GSL. The gates of the memorycells MC are connected to the word lines WL0 to WL3.

Lateral transistors may be provided in the well 103 of the substrate 101between the first and second common source lines CSL1 and CSL2. Thelateral transistors may include first to fifth lateral transistors LTR1to LTR5 that are connected in series. The gates of the first to fifthlateral transistors LTR1 to LTR5 are connected to the ground selectionline GSL. That is, the ground selection transistor GST and the first tofifth lateral transistors LTR1 to LTR5 may share a gate.

Two cell strings, for example, the first and third cell strings CSTR1and CSTR3 may be connected to the first bit line BL1 in common. Othertwo cell strings, for example, the two and fourth cell strings CSTR2 andCSTR4 may be connected to the second bit line BL2 in common. The firstto fourth cell strings CSTR1 to CSTR4 may be provided between the firstand second common source lines CSL1 and CSL2. Two cell strings, forexample, the first and second cell strings CSTR1 and CSTR2 may beconnected to the first string selection SSL1 in common. Other two cellstrings, for example, the third and fourth cell strings CSTR3 and CSTR4may be connected to the second string selection line SSL2 in common.

Referring to FIGS. 11 and 12, the sources of the first to fourth cellstrings CSTR1 to CSTR4 may be connected between the first and secondlateral transistors LTR1 and LTR2, between the second and third lateraltransistors LTR2 and LTR3, between the third and fourth lateraltransistors LTR3 and LTR4, and between the fourth and fifth lateraltransistors LTR4 and LTR5, respectively. The first and fifth lateraltransistors LTR1 and LTR5 may have a first threshold voltage Vth1, thesecond and fourth lateral transistors LTR2 and LTR4 may have a secondthreshold voltage Vth2, and the third lateral transistor LTR3 may have athird threshold voltage Vth3. The second and third threshold voltagesVth2 and Vth3 may be lower than the first threshold voltage Vth1. Thethird threshold voltage Vth3 may be equal to or lower than the secondthreshold voltage Vth2.

Most quantity of a current I passing through the first cell string CSTR1may flow to the first common source line CSL1 through the first lateraltransistor LTR1. The remain quantity of the current I passing throughthe first cell string CSTR1 may flow to the second common source lineCSL2 through the second to fifth lateral transistors LTR2 to LTR5. Mostquantity of a current I passing through the second cell string CSTR2 mayflow to the first common source line CSL1 through the first and secondlateral transistors LTR1 and LTR2. The remain quantity of the current Ipassing through the second cell string CSTR2 may flow to the secondcommon source line CSL2 through the third to fifth lateral transistorsLTR3 to LTR5. Most quantity of a current I passing through the thirdcell string CSTR3 may flow to the second common source line CSL2 throughthe fourth and fifth lateral transistors LTR4 and LTR5. The remainquantity of the current I passing through the third cell string CSTR3may flow to the first common source line CSL1 through the first to thirdlateral transistors LTR1 to LTR3. Most quantity of a current I passingthrough the fourth cell string CSTR4 may flow to the second commonsource line CSL2 through the fifth lateral transistor LTR5. The remainquantity of the current I passing through the fourth cell string CSTR4may flow to the first common source line CSL1 through the first tofourth lateral transistors LTR1 to LTR4.

As the second and third threshold voltages Vth2 and Vth3 are controlledto less than the first threshold voltage Vth1, a difference betweencurrents I passing through the cell strings can decrease.

According to another embodiment of the inventive concept, moreover, thearea of a memory cell is 5F², and thus a degree of integration canincrease. The number of bit lines selected by one string selection line,i.e., a page size can increase by two times compared to a typicalnonvolatile memory device. Therefore, the nonvolatile memory device 200according to another embodiment of the inventive concept can increase aprogramming and reading speed by two times compared to the typicalnonvolatile memory device. The nonvolatile memory device 200 accordingto another embodiment of the inventive concept can decrease the numberof control lines for controlling string selection lines by half comparedto the typical nonvolatile memory device.

FIGS. 13A and 13B illustrate an example of the nonvolatile memory device200 according to another embodiment of the inventive concept. FIG. 13Ais a cross-sectional view taken along line II-II′ of FIG. 10. FIG. 13Bis a plan view illustrating disposition of impurity regions which aredoped on a well.

Referring to FIGS. 13A and 13B, a substrate channel region 110 isprovided in the well 103 between the first and second common sourcelines CSL1 and CSL2. The substrate channel region 110 may include edgeregions 111 that are adjacent to the first and second common sourcelines CSL1 and CSL2 and extended in the firs direction, and a middleregion 112 between the edge regions 111. The edge regions 111 may beprovided between the first and second common source lines CSL1 and CSL2and active pillars most adjacent to the first and second common sourcelines CSL1 and CSL2.

The edge regions 111 and the middle region 112 may have the firstconductive type. The edge regions 111 may have a first impurity dopingconcentration, and the middle region 112 may have a second impuritydoping concentration lower than the first impurity doping concentration.The active pillars PL may contact the middle region 112.

FIGS. 12, 13A and 13B, the first to fifth lateral transistors LTR1 toLTR5 using the ground selection line GSL as a gate may be provided inthe substrate channel region 110. The first and fifth lateraltransistors LTR1 and LTR5 use the edge regions 111 as a channel. Thesecond to forth lateral transistors LTR2 to LTR4 use the middle region112 as a channel.

The first and fifth lateral transistors LTR1 and LTR5 of the edgeregions 111 may have a first threshold voltage Vth1. The second andfourth lateral transistors LTR2 and LTR4 of the middle region 112 mayhave a second threshold voltage Vth2. The third lateral transistors LTR3of the middle region 112 may have a third threshold voltage Vth3. Basedon the above-described doping profile, the second threshold voltage Vth2may be the same as the third threshold voltage Vth3. The second andthird threshold voltages Vth2 and Vth3 may be lower than the firstthreshold voltage Vth1.

Therefore, a first current I1 from active pillars PL, which areseparated by a first distance from the common source lines CSL1 andCSL2, to a common source line just adjacent to the active pillars PL maybe the substantially same as a second current I2 from active pillars PL,which are separated by a second distance greater than the first distancefrom the common source lines CSL1 and CSL2, to a common source lineadjacent to the active pillars PL. A current from the active pillars PLto a common source line that is not just adjacent to the active pillarsPL may be low by an ignorable degree.

If the impurity doping concentration of the edge regions 111 is the sameas that of the middle region 112, the second current I2 is inevitablylower than the first current I1. This is because a second distance fromactive pillars PL, which are not just adjacent to the edge regions 111,to the common source lines CSL1 and CSL2 is greater than a firstdistance from active pillars PL just adjacent to the edge regions 111 tothe common source lines CSL1 and CSL2.

Due to the high concentration doping of the first conductive impuritiesof the edge regions 111, the current off characteristic of the groundselection line GSL is maintained, the influence of the second conductiveimpurity ion of the common source lines CSL1 and CSL2 being diffusedinto the middle region 112 can be reduced. Due to the low concentrationdoping of the first conductive impurities of the middle region 112, acell current dispersion between active pillars that are separated by thefirst distance from the common source lines and active pillars that areseparated by the second distance greater than the first distance fromthe common source lines can decrease.

FIGS. 14A and 14B illustrate another example of the nonvolatile memorydevice 200 according to another embodiment of the inventive concept.FIG. 14A is a cross-sectional view taken along line II-II′ of FIG. 10.FIG. 14B is a plan view illustrating disposition of impurity regionswhich are doped on a well. Repetitive description on the same technicalfeature as that of FIGS. 13A and 13B will be omitted, and only adifference will be described below.

Referring to FIGS. 14A and 14B, the edge regions 111 may be edge regions111 having the first conductive type. The middle region 112 may havesecond impurity doping regions 116 having the first conductive type, andthird impurity regions 117. The edge regions 111 may have a firstimpurity doping concentration, and the second impurity regions 116 mayhave a second impurity doping concentration lower than the firstimpurity doping concentration. The third impurity regions 117 may havethe second conductive type. On the other hand, the third impurityregions 117 may have the first conductive type, and a third impuritydoping concentration lower than the second impurity dopingconcentration. The active pillars PL may contact the second impurityregions 116. The second impurity regions 116 may be extended in thesecond direction in which the active pillars PL are arranged. The thirdimpurity regions 117 may be provided between the second impurity regions116.

FIGS. 10, 14A and 14B, the first to fifth lateral transistors LTR1 toLTR5 using the ground selection line GSL as a gate may be provided inthe substrate channel region 110. The first and fifth lateraltransistors LTR1 and LTR5 may use the edge regions 111 as a channel. Thesecond to fourth lateral transistors LTR2 to LTR4 may use the thirdimpurity regions 117 as a channel.

The second and fourth lateral transistors LTR2 and LTR4 of the middleregion 112 may have a second threshold voltage Vth2. The third lateraltransistor LTR3 of the middle region 112 may have a third thresholdvoltage Vth3. Based on the above-described doping profile, the secondthreshold voltage Vth2 may be similar to the third threshold voltageVth3. The second and third threshold voltages Vth2 and Vth3 may be lowerthan the first threshold voltage Vth1. The second and third thresholdvoltages Vth2 and Vth3 may be lower than that of the example which hasbeen described above with reference to FIGS. 13A and 13B. The second tofourth lateral transistors LTR2 to LTR4 may always have a normally-onstate.

FIGS. 15A and 15B illustrate another example of the nonvolatile memorydevice 200 according to another embodiment of the inventive concept.FIG. 15A is a cross-sectional view taken along line II-II′ of FIG. 10.FIG. 15B is a plan view illustrating disposition of impurity regionswhich are doped on a well. Repetitive description on the same technicalfeature as that of FIGS. 14A and 14B will be omitted, and only adifference will be described below.

Referring to FIGS. 15A and 15B, the edge regions 111 may have the firstconductive type. The middle region 112 may have second impurity dopingregions 116 having the first conductive type, and a third impurityregion 117. The edge regions 111 may have a first impurity dopingconcentration, and the second impurity regions 116 may have a secondimpurity doping concentration lower than the first impurity dopingconcentration. The third impurity region 117 may have the secondconductive type. On the other hand, the third impurity region 117 mayhave the first conductive type, and a third impurity dopingconcentration lower than the second impurity doping concentration.

The second impurity regions 116 may be provided to overlap with thestring selection lines SSL1 to SSL3. The third impurity region 117 maybe provided between the second impurity regions 116. The third impurityregion 117 may overlap with a separated space between the stringselection lines SSL1 and SSL2.

FIGS. 16, 15A and 15B, the first to fifth lateral transistors LTR1 toLTR5 using the ground selection line GSL as a gate may be provided inthe substrate channel region 110. The first and fifth lateraltransistors LTR1 and LTR5 may use the edge regions 111 as a channel. Thesecond and fourth lateral transistors LTR2 and LTR4 may use the secondimpurity regions 116 as a channel. The third lateral transistor LTR3 mayuse the second and third impurity regions 116 and 117 as a channel.

The first and fifth lateral transistors LTR1 and LTR5 of the edgeregions 111 may have a first threshold voltage Vth1. The second andfourth lateral transistors LTR2 and LTR4 of the middle region 112 mayhave a second threshold voltage Vth2. The third lateral transistors LTR3of the middle region 112 may have a third threshold voltage Vth3. Basedon the above-described doping profile, the second threshold voltage Vth2may be lower than the first threshold voltage Vth1. The third thresholdvoltage Vth3 may be lower than the second threshold voltage Vth2.

FIG. 16 is a perspective view of the memory block which has beendescribed above with reference to FIGS. 1 and 2, and a nonvolatilememory device 300 according to another embodiment of the inventiveconcept will be described below with reference to FIG. 16. Repetitivedescription on the same technical feature as that of FIGS. 3 and 4 willbe omitted, and only a difference will be described below.

Referring to FIG. 16, a first conductive well 103 may be provided in asubstrate 101. A buffer dielectric layer 121 may be provided on thesubstrate 101. Insulation patterns 125 and conductive patterns, whichare separated from each other by disposing the insulation patterns, maybe provided on the buffer dielectric layer 121. The buffer dielectriclayer 121 may be much thinner than the insulation patterns 125.

The conductive patterns may include a ground selection line GSL, astring selection line SSL, and word lines WL0 to WL3 therebetween. Theconductive patterns may have a line shape extended in the firstdirection.

An isolation region 131 expanded in the first direction may be providedbetween the conductive patterns adjacent in the second direction. Thecommon source lines CSL1 and CSL2 are provided in the well 103 under theisolation region 131. The common source lines CSL1 and CSL2 may beseparated from each other and be extended in the first direction insidethe well 103. The common source lines CSL1 and CSL2 may have a secondconductive type different from the first conductive type.

A plurality of active pillars PL are provided to be connected to thewell 103 of the substrate 101 through the conductive patterns GSL, WL0to WL3 and SSL1 to SSL3. The active pillars PL may have a long axis thatis vertically extended from the substrate 101. (i.e., that is extendedin the third direction).

The active pillars PL are just adjacent and arranged to be alternatelyoffset. The active pillars PL, which are just adjacent and arealternately offset, are arranged to be offset to each other in the firstdirection. For example, the active pillars PL may be arranged at firstdistances D along a plurality of lines in the first direction. The firstdistance D may be two times greater than the size F of the activepillars PL (i.e., D=2F). In FIG. 16, for convenience, the first distanceD is exaggeratedly illustrated. The active pillars PL may include firstactive pillars PL1 of a first line in the first direction, second activepillars PL2 of a second line in the first direction, and third activepillars PL3 of a third line in the first direction, wherein the secondactive pillars PL2 are separated from and adjacent to the first line,and the third active pillars PL3 are separated from and adjacent to thethird line. The second active pillars PL2 may be shifted by 2F/3 (i.e.,D/3) in the first direction from the first active pillars PL1. The thirdactive pillars PL3 may be shifted by 2F/3 (i.e., D/3) in the firstdirection from the second active pillars PL2. As illustrated in FIG. 16,the first to third active pillars PL1 to PL3 may be repeatedly providedin the second direction intersecting the first direction. Other activepillars, which are shifted by 2F/3 (i.e., D/3) in the first directionfrom the third active pillars PL3, may be aligned with the first activepillars PL1 in the first direction.

The first to third active pillars PL1 to PL3 may be connected todifferent bit lines. The bit lines may include first to third bit linesBL1 to BL3. The first bit line BL1, for example, may connect the firstactive pillars PL1 and be extended in the second direction. The secondbit line BL2, for example, may connect the second active pillars PL2 andbe extended in the second direction. The third bit line BL3, forexample, may connect the third active pillars PL3 and be extended in thesecond direction.

A plurality of active pillars, which are just adjacent and arealternately offset, may be electrically coupled to one string selectionline extended in the first direction. One string selection line SSL maybe provided between the first and second common source lines CSL1 andCSL2.

FIGS. 17 and 18 are circuit diagrams illustrating a memory block of anonvolatile memory device according to another embodiment of theinventive concept. Repetitive description on the same technical featureas that of FIGS. 5 and 6 will be omitted, and only a difference will bedescribed below.

Referring to FIG. 17, a nonvolatile memory device 300 according toanother embodiment of the inventive concept may include a bit line, aplurality of word lines WL0 to WL3, a plurality of string selectionlines SSL1 to SSL3, a ground selection line GSL, a first common sourceline CSL1 and a second common source line CSL2. The bit line may includefirst and second bit lines BL1 and BL2 which are adjacent to each otherand extended in the second direction. A plurality of cell strings CSTR1to CSTR3 are provided between the bit line and the first and secondcommon source lines CSL1 and CSL2.

One cell string may include a string selection transistor SST connectedto the bit line, a ground selection transistor GST connected to thefirst and second common source lines CSL1 and CSL2, and a plurality ofmemory cells MC provided between the string selection transistor SST andthe ground selection transistor GST. The memory cells MC are provided atone active pillar. The gate of the ground selection transistor GST isconnected to the ground selection line GSL. The gates of the memorycells MC are connected to the word lines WL0 to WL3. The gate of thestring selection transistor SST is connected to the string selectionline SSL.

Lateral transistors may be provided in the well 103 of the substrate 101between the first and second common source lines CSL1 and CSL2. Thelateral transistors may include first to fourth lateral transistors LTR1to LTR4 that are connected in series. The gates of the first to fourthlateral transistors LTR1 to LTR4 are connected to the ground selectionline GSL. That is, the ground selection transistor GST and the first tofourth lateral transistors LTR1 to LTR4 may share a gate.

The first to third cell strings CSTR1 to CSTR3 may be connected todifferent bit lines, respectively. The first to third cell strings CSTR1to CSTR3 may be provided between the first and second common sourcelines CSL1 and CSL2. Three cell strings, for example, the first to thirdcell strings CSTR1 to CSTR3 may be connected to the string selectionline SSL in common.

Referring to FIGS. 17 and 18, the sources of the first to third cellstrings CSTR1 to CSTR3 may be connected between the first and secondlateral transistors LTR1 and LTR2, between the second and third lateraltransistors LTR2 and LTR3, and between the third and fourth lateraltransistors LTR3 and LTR4, respectively. The first and fourth lateraltransistors LTR1 and LTR4 may have a first threshold voltage Vth1, andthe second and third lateral transistors LTR2 and LTR3 may have a secondthreshold voltage Vth2. The second threshold voltages Vth2 may be lowerthan the first threshold voltage Vth1.

Most quantity of a current I passing through the first cell string CSTR1may flow to the first common source line CSL1 through the first lateraltransistor LTR1. The remain quantity of the current I passing throughthe first cell string CSTR1 may flow to the second common source lineCSL2 through the second to fourth lateral transistors LTR2 to LTR4. Acurrent I passing through the second cell string CSTR2 may flow to thefirst common source line CSL1 through the first and second lateraltransistors LTR1 and LTR2, and flow to the second common source lineCSL2 through the third and fourth lateral transistors LTR3 and LTR4.Most quantity of a current I passing through the third cell string CSTR3may flow to the second common source line CSL2 through the fourthlateral transistor LTR4. The remain quantity of the current I passingthrough the third cell string CSTR3 may flow to the first common sourceline CSL1 through the first to third lateral transistors LTR1 to LTR3.

As the second threshold voltage Vth2 is controlled to less than thefirst threshold voltage Vth1, a difference between currents I passingthrough the cell strings can decrease.

According to another embodiment of the inventive concept, moreover, thearea of a memory cell is 4.7F², and thus a degree of integration canincrease. According to another embodiment of the inventive concept, thenumber of bit lines selected by one string selection line, i.e., a pagesize can increase by three times compared to a typical nonvolatilememory device. Therefore, the nonvolatile memory device 300 according toanother embodiment of the inventive concept can increase a programmingand reading speed by three times compared to the typical nonvolatilememory device. The nonvolatile memory device 300 according to anotherembodiment of the inventive concept can decrease the number of controllines for controlling string selection lines by one-third compared tothe typical nonvolatile memory device.

FIGS. 19A and 19B illustrate an example of the nonvolatile memory device300 according to another embodiment of the inventive concept. FIG. 19Ais a cross-sectional view taken along line III-III′ of FIG. 16. FIG. 19Bis a plan view illustrating disposition of impurity regions which aredoped on a well.

Referring to FIGS. 19A and 19B, a substrate channel region 110 isprovided in the well 103 between the first and second common sourcelines CSL1 and CSL2. The substrate channel region 110 may include edgeregions 111 that are adjacent to the first and second common sourcelines CSL1 and CSL2 and extended in the firs direction, and a middleregion 112 between the edge regions 111. The edge regions 111 may beprovided between the first and second common source lines CSL1 and CSL2and active pillars most adjacent to the first and second common sourcelines CSL1 and CSL2.

The edge regions 111 and the middle region 112 may have the firstconductive type. The edge regions 111 may have a first impurity dopingconcentration, and the middle region 112 may have a second impuritydoping concentration lower than the first impurity doping concentration.The active pillars PL may contact the middle region 112.

FIGS. 16, 19A and 19B, the first to fourth lateral transistors LTR1 toLTR4 using the ground selection line GSL as a gate may be provided inthe substrate channel region 110. The first and fourth lateraltransistors LTR1 and LTR4 use the edge regions 111 as a channel. Thesecond and third lateral transistors LTR2 and LTR3 use the middle region112 as a channel.

The first and fourth lateral transistors LTR1 and LTR4 of the edgeregions 111 may have a first threshold voltage Vth1. The second andthird lateral transistors LTR2 and LTR3 of the middle region 112 mayhave a second threshold voltage Vth2. The second threshold voltage Vth2may be lower than the first threshold voltage Vth1. Therefore, a firstcurrent I1 from active pillars PL, which are separated by a firstdistance from the common source lines CSL1 and CSL2, to a common sourceline just adjacent to the active pillars PL may be the substantiallysame as a second current I2 from active pillars PL, which are separatedby a second distance greater than the first distance from the commonsource lines CSL1 and CSL2, to a common source line adjacent to theactive pillars PL. A current from the active pillars PL to a commonsource line that is not just adjacent to the active pillars PL may below by an ignorable degree.

If the impurity doping concentration of the edge regions 111 is the sameas that of the middle region 112, the second current I2 is inevitablylower than the first current I1. This is because a second distance fromactive pillars PL, which are not just adjacent to the edge regions 111,to the common source lines CSL1 and CSL2 is greater than a firstdistance from active pillars PL just adjacent to the edge regions 111 tothe common source lines CSL1 and CSL2.

Due to the high concentration doping of the first conductive impuritiesof the edge regions 111, the current off characteristic of the groundselection line GSL is maintained, the influence of the second conductiveimpurity ion of the common source lines CSL1 and CSL2 being diffusedinto the middle region 112 can be reduced. Due to the low concentrationdoping of the first conductive impurities of the middle region 112, acell current dispersion between active pillars that are separated by thefirst distance from the common source lines and active pillars that areseparated by the second distance greater than the first distance fromthe common source lines can decrease.

FIGS. 20A and 20B illustrate another example of the nonvolatile memorydevice 300 according to another embodiment of the inventive concept.FIG. 20A is a cross-sectional view taken along line III-III′ of FIG. 16.FIG. 20B is a plan view illustrating disposition of impurity regionswhich are doped on a well. Repetitive description on the same technicalfeature as that of FIGS. 19A and 19B will be omitted, and only adifference will be described below.

Referring to FIGS. 20A and 20B, the edge regions 111 may have the firstconductive type. The middle region 112 may have second impurity dopingregions 116 having the first conductive type, and third impurity regions117. The edge regions 111 may have a first impurity dopingconcentration, and the second impurity regions 116 may have a secondimpurity doping concentration lower than the first impurity dopingconcentration. The third impurity regions 117 may have the secondconductive type. On the other hand, the third impurity regions 117 mayhave the first conductive type, and a third impurity dopingconcentration lower than the second impurity doping concentration. Theactive pillars PL may contact the second impurity regions 116. Thesecond impurity regions 116 may be extended in the second direction inwhich the active pillars PL are arranged. The third impurity regions 117may be provided between the second impurity regions 116.

FIGS. 16, 20A and 20B, the first to fourth lateral transistors LTR1 toLTR4 using the ground selection line GSL as a gate may be provided inthe substrate channel region 110. The first and fourth lateraltransistors LTR1 and LTR4 may use the edge regions 111 as a channel. Thesecond and third lateral transistors LTR2 and LTR3 may use the thirdimpurity regions 117 as a channel.

The first and fourth lateral transistors LTR1 and LTR4 of the edgeregions 111 may have a first threshold voltage Vth1. The second andthird lateral transistor LTR2 and LTR3 of the middle region 112 may havea second threshold voltage Vth2. Based on the above-described dopingprofile, the second threshold voltage Vth2 may be lower than the firstthreshold voltage Vth1.

The nonvolatile memory devices according to embodiments of the inventiveconcept may be a NAND type flash memory device in which memory cellsprovided in one active pillar configure one cell string.

A method of forming the nonvolatile memory device according to theabove-described embodiments of the inventive concept will be describedbelow as an example.

FIGS. 21A to 21H illustrate an example of a method of forming thenonvolatile memory device according to an embodiment of the inventiveconcept which has been described above with reference to FIG. 7B, andare cross-sectional views corresponding to line I-I′ of FIG. 3.

Referring to FIG. 21A, a substrate 101 is provided. A well 103 may beformed by providing a first conductive impurity ion into the substrate101. The well 103 may be formed in an impurity ion injecting process. Afirst conductive impurity ion P− for controlling the threshold voltageof the lateral transistors is provided in the cell region of the well103 at a first concentration.

Referring to FIG. 21B, the first conductive impurity ion is provided infirst regions 113 including a region in which the common source line ofthe nonvolatile memory device is formed and a region adjacent to theregion, at a second concentration higher than the first concentration.The first regions 113 may be extended in the first direction.

Referring to FIG. 21C, a buffer dielectric layer 121 may be formed overthe substrate 101 including the well 103. The buffer dielectric layer121, for example, may be a silicon oxide layer. The buffer dielectriclayer 121, for example, may be formed in a thermal oxidation process.First material layers 123 and second material layers 125 are alternatelystacked on the buffer dielectric layer 121 and provided. A material ofthe lowermost layer contacting the buffer dielectric layer 121 may bethe first material layer 123. The material layer of the uppermost layermay be the second material layer 125. A first material layer of thelowermost layer and a first material layer of the uppermost layer may beformed thicker than first material layers between the lowermost layerand the uppermost layer. The second material layers 125 may beinsulation layers. The second material layers 125, for example, mayinclude silicon oxide. The first material layers 123 may include amaterial having wet etching characteristic different from that of thebuffer dielectric layer 121 and that of the second material layers 125.The first material layers, for example, may include silicon nitride orsilicon oxynitride. The first material layers 123 and the secondmaterial layers 125, for example, may be formed in a Chemical VaporDeposition (CVD) process.

Active pillars PL connected to the substrate 101 are formed through thebuffer dielectric layer 121, the first material layers 123 and thesecond material layers 125. The active pillars PL may be arranged in amatrix type based on the first and second directions. At least threeactive pillars PL may be arranged in the matrix type based on the firstand second directions, between the first regions 113.

A process of forming the active pillars PL will be described below as anexample. Channel holes 127 are formed through the buffer dielectriclayer 121, the first material layers 123 and the second material layers125, and a first conductive channel semiconductor layer is formed in thechannel holes 127. In an embodiment of the inventive concept, thechannel semiconductor layer is formed in order not to completely fillthe channel holes 127, but a insulating material may be formed on thechannel semiconductor layer and completely fill the channel holes 127.The channel semiconductor layer and the insulating material may beplanarized, thereby exposing the first material layer of the uppermostlayer. Therefore, cylinder-shaped active pillars PL having the insidefilled by a filling insulation layer 129 may be formed. In anotherembodiment of the inventive concept, the channel semiconductor layer maybe formed to fill the channel holes 127. In this case, the fillinginsulation layer 129 may not be required.

The upper portions of the active pillars PL may be recessed, and thusbecome lower than the second material layer 125 of the uppermost layer.Capping semiconductor patterns may be formed in the channel holes 127having the recessed active pillars PL. By injecting a second conductiveimpurity ion into the upper portions of the capping semiconductorpatterns and active pillars PL, drain regions D may be formed.

Referring to FIG. 21D, grooves 131 that are separated from each other,extended in the first direction and expose the well 103 of the substrate101 are formed by successively patterning the buffer dielectric layer121, the first material layers 123 and the second material layers 125.An empty space 133 is formed by selectively removing the first materiallayers 123 that are exposed to the grooves 131. The empty space 133corresponds to a portion with the first material layers 123 removed.When the first material layers 123 include silicon nitride, the removingprocess may use an etching solution including phosphoric acid. Thepartial portions of the side walls of the active pillars PL are exposedby the empty space 133.

Referring to FIG. 21E, an information storage layer 133 is conformallyformed in the empty space 133. The information storage layer 135 mayinclude a tunnel insulation layer contacting the active pillars PL, acharge storage layer on the tunnel insulation layer, and a blockinginsulation layer on the charge storage layer (see FIG. 4). The tunnelinsulation layer may include silicon oxide. The tunnel insulation layermay be formed by thermally oxidizing the active pillars PL that areexposed to the empty space 133. On the other hand, the tunnel insulationlayer may be formed in an Atomic Layer Deposition (ALD) process. Thecharge storage layer and the blocking dielectric layer may be formed ina CVD process and/or an ALD process having superior step coverage.

A conductive layer filling the empty space 133 is formed on theinformation storage layer 135. The conductive layer may fully ofpartially fill the empty space 133. The conductive layer may be formedof at least one of silicon, tungsten, metal nitrides or metal silicidesthat is/are doped. The conductive layer may be formed in the ALDprocess. The conductive layer formed outside the empty space 133 isremoved. Therefore, conductive patterns are formed in the empty space133. The conductive patterns may include string selection lines SSL,word lines WL0 to WL3, and a ground selection line GSL.

In this case, a conductive layer formed in the grooves 131 is removed,and thus the well 103 of the substrate 101 may be exposed. The secondconductive impurity ion is provided in the exposed well 103 at a highconcentration, and thus common source lines CSL1 and CSL2 may be formed.The second material layers 125 between the conductive patterns SSL, WL0to WL3 and GSL may be the insulation patterns. Therefore, a substratechannel region 110 is formed in the well 103 between the common sourcelines CSL1 and CSL2. The substrate channel region 110 includes edgeregions 111 that are adjacent to the common source lines CSL1 and CSL2and extended in the firs direction, and a middle region 112 between theedge regions 111. The edge regions 111 may be provided between thecommon source lines CSL1 and CSL2 and active pillars most adjacent tothe common source lines CSL1 and CSL2. The edge regions 111 and themiddle region 112 may have the first conductive type. The edge regions111 may have a first impurity doping concentration, and the middleregion 112 may have a second impurity doping concentration lower thanthe first impurity doping concentration. The active pillars PL maycontact the middle region 112.

Referring to FIG. 21F, an isolation pattern (not shown) filling thegrooves 131 is formed. A conductive pattern SSL of the uppermost portionis patterned, and thus string selection lines SSL1 to SSL3 are formed.The first to third string selection lines SSL1 to SSL3 are electricallycoupled to active pillars that are arranged in the first direction,between the first and second common source lines CSL1 and CSL2. Activepillars PL aligned in the second direction may be connected to one bitline BL through the bit line contact 141 in common.

FIGS. 22A to 22G illustrate another example of a method of forming thenonvolatile memory device according to an embodiment of the inventiveconcept which has been described above with reference to FIG. 8B, andare cross-sectional views corresponding to line I-I′ of FIG. 3.Repetitive description on the same technical feature as that of FIGS.21A and 21F will be omitted, and only a difference will be describedbelow.

Referring to FIG. 22A, a substrate 101 is provided. A well 103 may beformed by providing a first conductive impurity ion into the substrate101. The well 103 may be formed in an impurity ion injecting process. Afirst conductive impurity ion P− for controlling the threshold voltageof a transistor is provided in the cell region of the well 103 at afirst concentration.

Referring to FIGS. 22B and 22C, the first conductive impurity ion isprovided in first regions 113 including a region in which the commonsource line of the nonvolatile memory device is formed and a regionadjacent to the region, at a second concentration higher than the firstconcentration. The second conductive impurity ion is provided in asecond region 115 other than a region in which the active pillars of thenonvolatile memory device are formed, at a high concentration. The firstand second regions 113 and 115 may be extended in the first direction.

Referring to FIG. 22D, a process of forming the active pillars that havebeen described above with reference to FIG. 21C is performed.

Referring to FIGS. 22E and 22F, a process of forming the conductivepatterns that have been described above with reference to FIGS. 2W to21E is performed. The second conductive impurity ion is provided in thewell 103 at a high concentration, and thus common source lines CSL1 andCSL2 may be formed. Edge regions 111 may have the first conductive type.The middle region 112 may have second impurity doping regions 116 havingthe first conductive type, and third impurity regions 117. The edgeregions 111 may have a first impurity doping concentration, and thesecond impurity regions 116 may have a second impurity dopingconcentration lower than the first impurity doping concentration. Thethird impurity regions 117 may have the second conductive type. On theother hand, the third impurity regions 117 may have the first conductivetype, and a third impurity doping concentration lower than the secondimpurity doping concentration. The active pillars PL may contact thesecond impurity regions 116. The second impurity regions 116 may beextended in the second direction in which the active pillars PL arearranged. The third impurity regions 117 may be provided between thesecond impurity regions 116.

Referring to FIG. 22G, the process that has been described above withreference to FIG. 21F, and thus string selection lines SSL1 to SSL3 areformed. The first to third string selection lines SSL1 to SSL3 areelectrically coupled to active pillars PL that are arranged in the firstdirection, between the first and second common source lines CSL1 andCSL2. Active pillars PL aligned in the second direction may be connectedto one bit line BL through the bit line contact 141 in common.

FIGS. 23A to 23H illustrate another example of a method of forming thenonvolatile memory device according to an embodiment of the inventiveconcept which has been described above with reference to FIG. 9B, andare cross-sectional views corresponding to line I-I′ of FIG. 3.Repetitive description on the same technical feature as that of FIGS.22A and 22F will be omitted, and only a difference will be describedbelow.

In FIG. 23C, the second conductive impurity ion is provided in a region115 other than a region in which the active pillars of the nonvolatilememory device are formed, at a high concentration. The width of theregion 115 on which the second conductive impurity ion is doped isnarrower than that of FIG. 22C.

The edge regions 111 may have the first conductive type. The middleregion 112 may have second impurity doping regions 116 having the firstconductive type, and third impurity regions 117. The edge regions 111may have a first impurity doping concentration, and the second impurityregions 116 may have a second impurity doping concentration lower thanthe first impurity doping concentration. The second impurity regions 116may be provided to overlap with the string selection lines SSL1 to SSL3.The third impurity regions 117 may be provided between the secondimpurity regions 116. The third impurity regions 117 may overlap with aseparated space between the string selection lines SSL1 to SSL3.

The method of forming the nonvolatile memory device 200 according toanother embodiment of the inventive concept and the method of formingthe nonvolatile memory device 300 according to another embodiment of theinventive concept may be performed in a process similar to the method offorming the nonvolatile memory device 100 according to an embodiment ofthe inventive concept.

FIG. 24 is a block diagram illustrating a memory system 1000 whichincludes the above-described nonvolatile memory device, according to anembodiment of the inventive concept.

Referring to FIG. 24, a memory system 1000 according to an embodiment ofthe inventive concept includes a memory device 1100 and a controller1200. The memory device 1100 may be implemented as a nonvolatile memorydevice.

The controller 1200 is connected to a host and the memory device 1100.In response to a request from the host, the controller 1200 accesses thememory device 1100. For example, the controller 1200 controls thereading, writing, erasing and background operations of the memory device1100. The controller 1200 provides interface between the memory device1100 and the host. The controller 1200 drives firmware for controllingthe memory device 1100.

For example, as described above with reference to FIG. 1, the controller1200 provides a control signal CTRL and an address ADDR to the memorydevice 1100. Furthermore, the controller 1200 exchanges data DATA withthe memory device 1100.

Exemplarily, the controller 1200 may further include a Random AccessMemory (RAM), a processing unit, a host interface, and a memoryinterface. The RAM is used as at least one of a working memory of theprocessing unit, a cache memory between the memory device 1100 and thehost, and a buffer memory between the memory device 1100 and the host.The processing unit controls the overall operation of the controller1200.

The host interface includes a protocol for data exchange between thehost and the controller 1200. Exemplarily, the controller 1200 maycommunicate with external devices (for example, a host) through at leastone of various interface protocols such as a Universal Serial Bus (USB)protocol, a Multimedia Card (MMC) protocol, a Peripheral ComponentInterconnection (PCI) protocol, a PCI-Express (PCI-E) protocol, anAdvanced Technology Attachment (ATA) protocol, a Serial-ATA (SATA)protocol, a Parallel-ATA (PATA) protocol, a Small Component SmallInterface (SCSI) protocol, an Enhanced Small Disk Interface (ESDI)protocol and a Integrated Drive Electronics (IDE) protocol. A memoryinterface interfaces with the memory device 1100. For example, thememory interface includes a NAND interface or a NOR interface.

The memory system 1000 may further include an error correction block.The error correction block detects and corrects the error of data thatis read from the memory device 1100 with an Error Correction Code (ECC).For example, the error correction block is provided as the element ofthe controller 1200. The error correction block may be provided as theelement of the memory device 1100.

The controller 1200 and the memory device 1100 may be integrated as onesemiconductor device. Exemplarily, the controller 1200 and the memorydevice 1100 are integrated as one semiconductor device to configure amemory card. For example, the controller 1200 and the memory device 1100are integrated as one semiconductor device to configure a memory cardsuch as a PC card (Personal Computer Memory Card InternationalAssociation (PCMICA)), a compact flash card (CF), a smart media card(SM, SMC), a memory stick, a multimedia card (MMC, RS-MMC, MMCmicro), anSD card (SD, miniSD, microSD, SDHC) and a universal flash memory device(UFS).

The controller 120 and the memory device 1100 are integrated as onesemiconductor device to configure a semiconductor drive (Solid StateDrive (SSD). The semiconductor drive (SSD) includes a storage unit forstoring data in a semiconductor memory. When the memory system 1000 isused as the semiconductor drive (SSD), the operation speed of the hostconnected to the memory system 1000 is considerably improved.

As another example, the memory system 1000 is provided as one of variouselements of electronic devices such as computers, Ultra Mobile PCs(UMPCs), workstations, net-books, Personal Digital Assistants (PDAs),portable computers, web tablets, wireless phones, mobile phones, smartphones, e-books, Portable Multimedia Players (PMPs), portable gamemachines, navigation devices, black boxes, digital cameras, DigitalMultimedia Broadcasting (DMB) players, digital audio recorders, digitalaudio players, digital picture recorders, digital picture players,digital video recorders, digital video players, devices fortransmitting/receiving information at a wireless environment, one ofvarious electronic devices configuring a home network, one of variouselectronic devices configuring a computer network, one of variouselectronic devices configuring a telematics network, RFID devices andone of various elements configuring a computing system.

For example, the memory device 1100 or the memory system 1000 may bemounted as various types of packages. For example, the memory device1100 or the memory system 1000 may be packaged in a package type such asPackage on Package (PoP), Ball Grid Arrays (BGAs), Chip Scale Packages(CSPs), Plastic Leaded Chip Carrier (PLCC), Plastic Dual In-Line Package(PDIP), Die In Waffle Pack (DIWP), Die In Wafer Form (DIWF), Chip OnBoard (COB), Ceramic Dual In-Line Package (CERDIP), Plastic Metric QuadFlat Pack (MQFP), Thin Quad Flat Pack (TQFP), Small Outline Package(SOP), Shrink Small Outline Package (SSOP), Thin Small Outline Package(TSOP), Thin Quad Flat Pack (TQFP), System In Package (SIP), Multi ChipPackage (MCP), Wafer Level Stack Package (WLSP), Die In Wafer Form(DIWF), Die On Waffle Package (DOWP), Wafer-level Fabricated Package(WFP) and Wafer-Level Processed Stack Package (WSP), thereby beingmounted.

FIG. 25 is a block diagram illustrating an application example of thememory system 1000 of FIG. 24. Referring to FIG. 25, a memory system2000 includes a memory device 2100 and a controller 2200. The memorydevice 2100 includes a plurality of nonvolatile memory chips. Theplurality of nonvolatile memory chips are divided into a plurality ofgroups. The each group of the nonvolatile memory chips communicates withthe controller 2200 through a common channel. In FIG. 25, it isillustrated that the plurality of nonvolatile memory chips communicatewith the controller 2200 through first to kth channels CH1 to CHk.

In FIG. 25, it has been described above that the plurality ofnonvolatile memory chips are connected to one channel. However, thememory system 2000 may be modified so that one nonvolatile memory chipmay be connected to one channel.

FIG. 26 is a block diagram illustrating a computing system 3000including the memory system 2000 which has been described above withreference to FIG. 25.

Referring to FIG. 26, a computing system 3000 includes a CentralProcessing Unit (CPU) 3100, a RAM 3200, a user interface 3300, a powersupply 3400, and the memory system 2000.

The memory system 2000 is electrically connected to the CPU 3100, theRAM 3200, the user interface 3300 and the power supply 3400 through asystem bus 3500. Data, which is provided through the user interface 3300or is processed by the CPU 3100, is stored in the memory system 2000.

In FIG. 26, it is illustrated that the memory device 2100 is connectedto the system bus 3500 through the controller 2200. However, the memorydevice 2100 may be directly connected to the system bus 3500.

In FIG. 26, it is illustrated that the memory system 2000 which has beendescribed above with reference to FIG. 25 is provided. However, thememory system 2000 may be replaced by the memory system 1000 that hasbeen described above with reference to FIG. 24.

For example, the computing system 3000 may include all the memorysystems 1000 and 2000 that have respectively been described above withreference to FIGS. 24 and 25.

According to embodiments of the inventive concept, the nonvolatilememory device can reduce the dispersion of the cell current betweenactive pillars that is separated by the first distance from the commonsource lines and active pillars that is separated by the second distancefrom the common source lines.

The above-disclosed subject matter is to be considered illustrative andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe true spirit and scope of the inventive concept. Thus, to the maximumextent allowed by law, the scope of the inventive concept is to bedetermined by the broadest permissible interpretation of the followingclaims and their equivalents, and shall not be restricted or limited bythe foregoing detailed description.

1. A nonvolatile memory device comprising: first and second commonsource lines of a first conductivity type in a substrate; a channelregion of a second conductivity type in the substrate between the firstand second common source lines; a stacked structure on the channelregion, the stacked structure including a vertically-stacked pluralityof conductive patterns; first and second string selection lines on thestacked structure, the first and second string selection lineshorizontally spaced apart from each other; a bit line overlapping thefirst and second string selection lines; a first vertical channelpenetrating the first string selection line and the stacked structure,the first vertical channel connecting the first common source line tothe bit line; and a second vertical channel penetrating the secondstring selection line and the stacked structure, the second verticalchannel connecting the second common source line to the bit line.
 2. Thenonvolatile memory device of claim 1, wherein each of the first andsecond vertical channels is in contact with the channel region.
 3. Thenonvolatile memory device of claim 1, wherein the first vertical channelis spaced apart from the first common source line by a first distance,and wherein the second vertical channel is spaced apart from the secondcommon source line by a second distance different from the firstdistance.
 4. The nonvolatile memory device of claim 1, wherein thechannel region comprises edge regions directly adjacent the first andsecond common source lines and a middle region between the edge regions,and wherein a first impurity doping concentration of the edge regions ishigher than a second impurity doping concentration of the middle region.5. The nonvolatile memory device of claim 4, the first and secondvertical channels are in contact with the middle region.
 6. Thenonvolatile memory device of claim 4, wherein the middle regioncomprises: first regions contacting the first and second verticalchannels, and extending in a direction; and a second region extending inthe direction between the first regions.
 7. The nonvolatile memorydevice of claim 4, wherein the middle region comprises a doping regionextending in a direction between the first and second vertical channelsand having the second conductivity type.
 8. The nonvolatile memorydevice of claim 1, wherein the first and second common source lines aresubstantially parallel with the first and the second string selectionlines.
 9. A nonvolatile memory device comprising: first and secondcommon source lines of a first conductivity type in a substrate; achannel region of a second conductivity type in the substrate betweenthe first and second common source lines; a bit line overlapping thefirst and second common source lines; a first string connected betweenthe first common source line and the bit line, the first stringcomprising: a first vertically-stacked plurality of nonvolatile memorycells; a first string select transistor connected between the bit lineand the first vertically-stacked plurality of nonvolatile memory cells;a first ground select transistor connected with the firstvertically-stacked plurality of nonvolatile memory cells; and a firstlateral ground select transistor connected between the first groundselect transistor and the first common source line; and a second stringconnected between the second common source line and the bit line, thesecond string comprising: a second vertically-stacked plurality ofnonvolatile memory cells; a second string select transistor connectedbetween the bit line and the second vertically-stacked plurality ofnonvolatile memory cells; a second ground select transistor connectedwith the second vertically-stacked plurality of nonvolatile memorycells; and a second lateral ground select transistor connected betweenthe second ground select transistor and the second common source line,wherein the first and second lateral ground select transistors areconfigured to use the channel region as a channel.
 10. The nonvolatilememory device of claim 9, wherein the channel region comprises edgeregions directly adjacent the first and second common source lines and amiddle region between the edge regions, and wherein a first impuritydoping concentration of the edge regions is higher than a secondimpurity doping concentration of the middle region.
 11. The nonvolatilememory device of claim 10, wherein the first and second lateral groundselect transistors are configured to use the edge regions as thechannel.
 12. The nonvolatile memory device of claim 10, wherein thefirst string is spaced apart from the first common source line by afirst distance, and wherein the second string is spaced apart from thesecond common source line by a second distance different from the firstdistance.